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    • 专利摘要:
    An electromechanical microsystem (1) comprising an assembly (1e) of a plurality of layers stacked in a stacking direction (z) comprising an active layer (2) of monocrystalline silicon comprising an active structure (3), and a first cover ( 4) and a second cover (5) delimiting a cavity (6) around the active structure (3), the active layer (2) being interposed between the first cover (4) and the second cover (5), the second cover (5) comprising a single layer (8) of monocrystalline silicon. The assembly (1e) further comprises a decoupling layer (9) of monocrystalline silicon comprising: - a transfer member (10) intended to be fixed to a support (11), - a frame (12) surrounding the transfer element (10) in the plane of the decoupling layer (9), - a mechanical decoupling structure (13) connecting the frame (12) and the transfer structure (10), the mechanical cutting structure (13) for flexibly connecting the transfer member (10) to the frame (12), the frame (12) is integral with the silicon layer (8) of the second cover (5) and at most one film of a material is interposed between said frame (12) and said silicon layer (8) of the second cover (5). The material is silicon dioxide.
    公开号:FR3042483A1
    申请号:FR1502178
    申请日:2015-10-16
    公开日:2017-04-21
    发明作者:Fabien Filhol；Pierre Olivier Lefort；Bertrand Leverrier；Regis Quer；Bernard Chaumet
    申请人:Thales SA；
    IPC主号:
    专利说明:

    ELECTROMECHANICAL MICROSYSTEM AND METHOD FOR
    MANUFACTURING
    The present invention relates to electromechanical microsystems called MEMS with reference to the acronym for the term "Micromelectromechanical Systems" such as microsensors or microactuators. The invention relates to micro-machined microsystems, of the silicon type (that is to say comprising an active mechanical structure produced in a monocrystalline silicon layer). The active structure is essentially planar in the plate in which it is engraved. The manufacture of these micro-machined micro-electromechanical systems uses collective micro-machining techniques, etching, doping deposits, etc., similar to those used for the manufacture of electronic integrated circuits, allowing low production costs. The invention relates more particularly to microsensors, for measuring a physical quantity such as an angular velocity (gyrometer), an angular displacement (gyroscope), an acceleration (accelerometer), or a pressure (pressure sensor). By sensitive structure of a MEMS sensor is meant a deformable part of the MEMS whose deformation varies under the effect of a physical quantity (acceleration, angular velocity, pressure) which is the physical quantity to be measured. The active structure can also be deformed under the effect of an electrical signal, when it comprises micro-actuators. The active structure typically has dimensions ranging from a few micrometers to a few millimeters.
    According to a frequent embodiment, the sensitive structure of a MEMS sensor is vibrated so as to observe the effect of the physical quantity to be measured on the resonance frequency or the amplitude of vibration. In general, the performance of such a sensor depends on the quality factor of the one or more useful modes of vibration of the sensitive structure. Monocrystalline materials such as quartz or silicon make it possible to manufacture micro-resonators with high quality factors.
    The packaging comprises the means that make it possible to manipulate these MEMs during integration into the products without the risk of degrading them and by limiting the impact of the external environment on their sensitive structures, in particular to protect them from dust. On the other hand, to obtain a high quality factor, it is necessary to put the active structure in a vacuum more or less advanced. It is thus encapsulated in a sealed enclosure, which can be integrated in the MEMS chip or can be made by a housing in which the MEMS chip is attached, and in which a reduced pressure atmosphere is achieved. It is common for pressure less than 10'2 hPa to be necessary for proper operation. MEMS carryover technologies in its case must therefore be compatible with the vacuum, which leads to avoid materials likely to degas.
    The packaging must also take care to control the relative position of the sensitive structure on its support. It is known to use bonding or soldering technologies to fix the MEMS on a support. Bonding or soldering is carried out mainly or part of a face of the structure using so-called silicone-based flexible adhesives or so-called steep solders based on a gold / tin mixture.
    FIG. 1 illustrates a first architecture of an electromechanical device comprising a MEMS chip 500 fixed on a support 508. The MEMS chip comprising a stack, made in a stacking direction z, of a plurality of silicon layers comprising: a monocrystalline silicon substrate 501, a monocrystalline silicon cover 504, a monocrystalline silicon sensitive layer 502 interposed between the cover 504 and the substrate 501, said sensitive layer 502 comprising a deformable sensitive structure 503. The cover 504 and the substrate 501 delimit a cavity 505 around the active structure 503.
    The monocrystalline silicon layers 501, 502, 504 are connected two by two by silicon oxide layers 506, 507. The MEMS chip 500 is fixed to a support 508, here a housing, by means of bonding pads 509 or brazing. One of the constraints that can affect the performance of the MEMS sensor, which is of particular interest to the present invention, is the limitation of the transmission of thermomechanical stresses with a slow evolution on the sensitive structure. The thermomechanical stresses are transmitted to the sensitive structure 503 by the fixing elements 509 of the sensor. These stresses typically come from: deformations in the plane perpendicular to the stacking direction z, caused by the phenomenon of differential thermal expansion between the material of the MEMS sensor 500 and the material of the support 508; deformations of the support 508 outside this plane, caused for example by the fixing of the support 508 to another element; - Creep phenomenon in the material used for fixing the MEMS sensor to its support, that is to say in the fixing studs which produces a slow evolution of the constraints.
    Part of these deformations is transmitted to the sensitive structure of the MEMS sensor and causes a drift of the output signal of the sensor. It is possible to model and compensate for some of this drift, especially drift due to temperature variations. On the other hand, it is not possible to compensate for drift due to creep phenomena. The design of high-performance microsensors requires optimizing the architecture of the MEMS sensor transfer so as to minimize the transmission of thermomechanical stresses on the sensitive element, that is to say in order to achieve deformation decoupling static between the support and the sensitive structure.
    This can in particular be obtained by flexible fastening elements, for example silicone-based glues, which make it possible to pride the support on the MEMS sensor, which deform to absorb the deformations of the support. However, the bonding or brazing surface must be large enough to ensure the robustness of the connection in the application environment (vibrations, shocks, thermal cycles). It follows that it is difficult to completely cancel the stresses caused by the difference between the coefficients of thermal expansion of the MEMS chip silicon and the bonding / brazing material. In addition, the performance of the sensor may be sensitive to the geometrical defects of the glue / solder pad.
    It is also known to use brazing technologies with different alloys (for example a gold / tin mixture) or rigid bonding to fix the MEMS sensor to its support, on more or less significant surfaces of the MEMS sensor. However, these alloys being much stiffer than a flexible bonding, they are likely to strongly transmit thermomechanical stresses to the sensitive element.
    To overcome the drawbacks mentioned above, it is known that flexible decoupling structures can be added to achieve the interface between the fastening elements (or fixing studs) and the MEMS sensor.
    FIG. 2 illustrates a decoupling layer of a second example of a microsystem according to the prior art. This microsystem is described in the patent application published with the reference EP2447209. It differs from that of FIG. 1 by its cover 604, the only visible element in FIG. 2. FIG. 2 schematically represents, in section, the cover 604. The cover 604 comprises elements of F1, F2, F3, F4 by which the MEMS chip is fixed to the support 508. The device thus comprises 4 fixing studs interposed between the respective fastening elements F1 to F4 and the support 508. The fastening elements F1, F2, F3, F4 are connected to the zones of the active layer Z1 to Z4 which are integral with the sensitive layer 502 by flexible decoupling structures which are flexible beams (P1a, P1b, P2a, P2b, P3a, P3b, P4a and P4b) extending in two orthogonal directions of the plane x , y perpendicular to the stacking direction z. The flexible decoupling structures have the role of filtering the static deformations of the support to minimize the transmission of mechanical stresses from the support 508 to the sensitive structure 503.
    This solution makes it possible to improve the performance of the static decoupling of the thermomechanical stresses between the active structure of the MEMS sensor and its support. On the other hand, this solution remains limited by the fact that the fixation is hyperstatic, that is to say that there are more points of fixation than what is strictly necessary to suppress all the degrees of freedom. In spite of the static decoupling realized by the decoupling beams, there remains always a part of the deformation of the support which will be transmitted to the active structure.
    An object of the invention is to design an electromechanical microsystem that can be attached to a support with limited transmission of mechanical stresses from the support to the active structure of the MEMS chip. For this purpose, the subject of the invention is an electromechanical microsystem comprising an assembly of a plurality of layers stacked in a stacking direction comprising: an active monocrystalline silicon layer, said active layer comprising an active structure, a first cover and a second cover defining a cavity around the active structure, the active layer being interposed between the first cover and the second cover, the second cover comprising a single monocrystalline silicon layer. The assembly further comprises a monocrystalline silicon decoupling layer comprising: - a transfer element intended to be fixed to a support, - a frame surrounding the transfer element in the plane of the decoupling layer, - a structure mechanical decoupling connecting the frame and the transfer structure, the mechanical cutting structure for flexibly connecting the transfer element to the frame.
    The frame is integral with the silicon layer of the second cover and at most one film of a material is interposed between said frame and said silicon layer of the second cover. The material is silicon dioxide.
    The electromechanical microsystem thus formed is a MEMS chip. A single carry element MEMS chip is intended to be attached to a support. The decoupling structures make it possible to limit the transmission of stresses related to deformations of the support towards the MEMS chip and in particular towards the sensitive structure of the MEMS chip. It is indeed possible to form an isostatic bond between the MEMS chip and its support. The transfer element occupies a central position, in a plane perpendicular to the stacking direction, since it is surrounded by a frame. The carry element is linked to the frame, and therefore to the rest of the MEMS chip, by the flexible decoupling structures. This architecture makes it possible to limit the effects of the vibrations on the sensitive structure by keeping a certain degree of equilibrium of the structure. In addition, the fact of making the decoupling structures in the center, rather than in the periphery, leads to a saving of silicon surface, which also provides an advantage in terms of recurrent cost of manufacture, since it is possible to manufacture a more MEMS chips per wafer.
    The production of a decoupling structure involves etching a silicon layer and releasing the formed structure, which has the effect of allowing the ambient atmosphere to pass through the layer in which the decoupling structure is made. The fact of forming the transfer element and the decoupling structure in a dedicated additional silicon layer different from the silicon layers of the covers, makes it possible to avoid compromising the encapsulation of the active structure in the cavity formed around this structure. sensitive. This makes it possible to avoid breaking the vacuum integrated in the cavity formed around the sensitive structure or to avoid exposing the active structure to dust while placing the mechanical decoupler opposite the sensitive structures of the MEMS chip (FIG. that is, by providing decoupling structures occupying the same coordinates as the sensitive structures of the MEMS chip in a plane perpendicular to the stacking direction). Now, placing the decoupling structure opposite the sensitive structures of the MEMS chip makes it possible to guarantee a certain balance of the structure in order to limit the effect of the vibrations on the active structure and to maintain the general symmetry of the sensor structure. which makes it possible to obtain a certain degree of symmetry of the physical effects applying to the active structure. This is particularly important in the case where the sensitive structure has elements of symmetry resulting from a differential architecture. The MEMS chip is thus compatible with a vacuum produced in the housing and a vacuum integrated in the MEMS chip without dust or vacuum degradation. . The invention is compatible with the various solutions of brazing or rigid or flexible bonding, which leaves the designer with degrees of freedom to adjust the dynamic decoupling according to the architecture of the active structure and the target application environment. By dynamic decoupling is meant the separation of the frequencies of the eigen modes of vibration of the MEMS chip reported on its support and the frequencies of the useful modes of the active structure.
    Since the decoupling structures are made directly in the silicon of the MEMS chip, the homogeneity and compactness of the chip are preserved and collective fabrication of a plurality of chips according to the invention is possible. Moreover, the micro-machining processes available for producing the active structure and the decoupling structure, as well as the methods for assembling the silicon bonnet with the decoupling layer, make it possible to control their geometries and to obtain positioning. precise relations between these structures.
    This makes it possible to minimize the induced thermal stresses, thanks to the homogeneity of the materials around the interfaces and the absence of filler material other than silicon dioxide.
    The microsystem according to the invention advantageously comprises at least one of the following characteristics taken alone or in combination: the decoupling layer and the second cap are assembled by direct sealing; the active structure, in a plane perpendicular to the stacking direction present, at least one symmetry element and the mechanical decoupling structure has said at least one symmetry element; the transfer element and the decoupling structure have planes of symmetry parallel to the stacking direction, these planes of symmetry intersect along a straight line parallel to the stacking direction and on which is located the center of mass of the part of the electromechanical microsystem that is connected to the transfer element by the decoupling structure. ; the mechanical decoupling structure comprises: at least one first decoupling element designed to allow displacement of the transfer element with respect to the frame in a first direction of the plane of the decoupling layer but to prevent any significant movement of the decoupling element; element relative to the frame in a second direction of the plane of the decoupling layer perpendicular to the first direction, - at least a second decoupling element designed to allow a displacement of the transfer element relative to the frame in a manner third direction of the plane of the decoupling layer but to prevent any significant movement of the transfer element relative to the frame in a fourth direction of the plane of the decoupling layer perpendicular to the third direction, the third direction being distinct from the first direction; direction ; - The first direction and the third direction are orthogonal, - the mechanical decoupling structure comprises two first decoupling elements arranged on either side of the transfer element in the first direction and two second decoupling elements arranged on both sides. other of the carry element in the third direction; the first and second decoupling elements are bending arms; the central transfer element is delimited by a polygon comprising a plurality of sides, the decoupling structure comprising connecting elements connecting the frame and the respective sides of the polygon, each connecting element comprising at least one of said connecting arms; extending parallel to said side of the polygon; - the polygon comprises more than four sides. The invention also relates to an electromechanical device comprising the electromechanical microsystem according to the invention and a support, the decoupling layer being fixed to said support only via said transfer element.
    Advantageously, a single continuous surface of the transfer element is fixed to said support. The invention also relates to a method for manufacturing an electromechanical microsystem according to the invention, said method comprising a step of forming the assembly comprising a stacking and assembly step in which the assembly is stacked and assembled. decoupling layer and the silicon layer of the second cover, so that at most one film of a material is interposed between the decoupling layer and said silicon layer of the second cover, the material being silicon dioxide.
    Advantageously, the assembly of the decoupling layer and the silicon layer of the second cover is made by direct sealing.
    Advantageously, the method comprises a collective step of forming the assembly of the plurality of layers making it possible to obtain an assembly in the form of a plate incorporating a plurality of electromechanical microsystems and a separation step of cutting the plate so as to isolate electromechanical microsystems. Other features and advantages of the invention will appear on reading the detailed description which follows, given by way of non-limiting example and with reference to the appended drawings in which: FIG. 1 already described represents in section a micromechanical microsystem according to the prior art, the section is represented in a plane parallel to the stacking direction of layers forming the microsystem, FIG. 2 already described schematically represents in section a decoupling layer of a microsystem of the prior art, FIG. 3 schematically represents a micromechanical microsystem according to the invention in section, along a plane parallel to the stacking direction, FIGS. 4 and 5 show diagrammatically in section in planes perpendicular to the stacking direction, three examples of decoupling layers. according to the invention, FIG. 6 schematically represents the steps of an exe method of the invention. From one figure to another, the same elements are identified by the same references.
    FIG. 3 schematically represents a sectional view of an electromechanical microsystem or MEMS chip according to the invention. The section is made in a plane comprising the stacking direction z.
    The microsystem according to the invention is for example a sensor.
    As can be seen in FIG. 3, the electromechanical microsystem 1 or MEMS chip according to the invention comprises an assembly 1e of a plurality of layers stacked in the stacking direction z. The plurality of layers comprises: an active layer 2 of monocrystalline silicon, said active layer 2 comprising an active structure 3 of the electromechanical microsystem 1, a first cover 4 and a second cover defining a cavity 6 around the active structure 3.
    The active structure 3 is micro-machined in the plane of the silicon layer 2. The active structure is a mobile structure, that is to say freely deformable, with respect to the remainder of the active layer 2 and more particularly with respect to at one or more fixed anchoring zones of the active layer 2.
    The active layer 2 is interposed, in the z direction, between the first cover 4 and the second cover 5. The covers 4 and 5 have the function of supporting the sensitive (or active) layer of the MEMS chip and protecting the sensitive structure 3 dust and shocks.
    The first cover 4 and the second cover 5 each comprise a single monocrystalline silicon layer 7, 8. In the nonlimiting embodiment of FIG. 3, the silicon layer 7 of the first cover 2 is not oxidized with respect to the structure sensitive 3 while the silicon layer 8 of the second cover 5 is oxidized next to the sensitive structure 3. In general, each cover 4, 5 consists of an oxide monocrystalline silicon layer, at least with respect to the structure sensitive, or a pure silicon layer facing the sensitive structure 3, that is to say unoxidized with respect to the sensitive structure 3. On the non-limiting embodiment of Figure 3, a layer of silicon 15, 16 is interposed between each cover 4, 5 and the active layer 2 at the assembly interfaces between each cover and the active layer 2. The stack according to the invention further comprises a decoupling layer 9 of monocrystalline silicon comprising a transfer member 10 for attachment to a support 11. The stack is fixed to the support 11 via the decoupling layer 9 only. In the embodiment of FIG. 3, the decoupling layer 9 is fixed to the support 11 only via the transfer element 10. In other words, only the transfer element 10 of the decoupling layer 9 is fixed to the support 11.
    In the preferred embodiment of FIG. 3, the stack is fixed to the support via a single continuous zone of the surface 10a of the transfer element 10 opposite to the second cap 5 is fixed to the support 11. This attachment is carried out on the non-limiting embodiment of Figure 3, by means of a single solder pad or bonding 19 connecting the transfer element 10 to the support 11. This embodiment is easy to master. In a variant, a plurality of disjoint zones of the transfer element 10 are fixed to the support 11. For example, several glue or brazing pads are used. Any other method of attachment for fixing the stack to the support 11, only via the transfer member 10 can be used.
    The support 11 may be the bottom of a housing allowing, for example, to encapsulate the MEMS chip under vacuum. The support may alternatively be an electronic card.
    According to the invention, the decoupling layer 9 comprises a set of structures comprising the transfer element 10 and a frame 12 surrounding the transfer element 10 in a plane of the decoupling layer perpendicular to the stacking direction oz. The plane of the decoupling layer is perpendicular to the plane of Figure 3, it is a plane xy. The frame 12 preferably completely surrounds the transfer member 10. The frame 12 has a generally rectangular shape but any other shape is possible. The transfer member 10 has a block shape in the xy plane of the decoupling layer. In other words, the transfer structure 10 has, in the xy plane of the decoupling layer, the shape of a monolithic island. Therefore, the decoupling layer 9 comprises a single surface 10a by which it is intended to be carried on a support 11. The set of structures comprises a mechanical decoupling structure 13 connecting the frame 12 to the transfer element 10. The decoupling structure 13 is not shown in detail in Figure 3, it is represented by an area where there are spaced points. It is arranged around the transfer member 10. The decoupling structure 13 is configured to flexibly attach the transfer member 10 to the frame 12 in the xy plane of the decoupling layer 9. Therefore, the decoupling structure 13 makes it possible to prevent the transmission of the static deformations of the support 11 in the xy plane towards the active structure 3. These deformations in the plane are transmitted to the transfer element 10 and then absorbed by the decoupling structure 13. The decoupling layer 13 according to the invention therefore makes it possible to ensure the absorption of the differential deformations of the support and of the transfer element 10 under the effect of temperature variations while allowing to ensure a rigid fixation of the chip MEMS to a support 11 via the transfer element 10.
    The frame 12 is secured to the silicon layer 8 of the second cover 5. The covers 4, 5 and the frame 12 form fixed anchoring zones and integral with each other. According to the invention, the frame 12 is fixed directly to the silicon layer 8 of the second cover 5. By directly attached, it is meant that the frame 12, is separated from the silicon layer 8 at the most by a film 14 of a material, the material being silicon dioxide.
    Advantageously, the decoupling layer 9 is fixed to the silicon layer 8 only via the frame 12.
    The silicon layer 8 to which the frame 12 is fixed is the silicon layer of the stack which is adjacent to the decoupling layer 9 in the z direction. In other words, the silicon layer 8 of the second cap 5 is interposed between the decoupling layer 9 and the active layer 2, in the oz stacking direction over its entire surface.
    Typically, the silicon layers have a thickness of between 1 micrometer and 1 mm.
    If, as is the case in FIG. 2, a film 14 of silicon dioxide is interposed between the silicon layer 8 and the frame 12, this film has a small thickness compared to that of the decoupling layer 9 and of the silicon layer 8 of the second cover 5. Typically, the silicon dioxide film 14 has a thickness of between 10 nanometers and 2 micrometers. It advantageously has a thickness at least 10 times smaller than the thickness of the decoupling layer.
    Since at most one silicon oxide film 14 is interposed between the single crystal silicon frame 12 and the monocrystalline silicon layer 8 of the second cap 5, the transmission of the constraints related to the differential thermal deformations between the second cap is limited. and the decoupling layer, i.e., the effect of temperature variations on the performance of the MEMS chip. Indeed, either monocrystalline silicon layers are contiguous with each other, in which case the difference in thermal expansion coefficient between these layers is zero, or they are separated only by a silicon oxide layer whose thermal expansion coefficient is close that of silicon. It has been demonstrated experimentally that this type of stack, combining monocrystalline silicon and silicon oxide, gives very good results in terms of stability in temperature and time.
    The decoupling layer 9 fixed in this way to the silicon layer 8 of the second cover 5 is part of the chip ME MS. The chip can be assembled in a clean room and the only transfer step, which is a critical step for the performance of the MEMS chip, is a unique and final stage of transfer of the MEMS chip to the support by gluing or brazing. This makes it possible to limit the impact of this critical step on the performance of the MEMS chip and to facilitate its development and control. Indeed, the fixing of the decoupling layer to the silicon layer of the second cover without filler material other than silicon dioxide makes it possible to prevent the heating, during the transfer step of the MEMS chip on the support, has an influence on the connection between the decoupling layer 9 and the second cover 5. This also makes it easy to control the robustness of the connection between these layers in the application environment (vibrations, shocks, thermal cycles) and the alignment of the active structure and in particular of the sensitive MEMS axis with the support and with the decoupling structure 9 in the case of an inertial sensor. Moreover, the step of fixing the decoupling layer 9 to the second cover 5 can be performed simply and quickly collectively for several MEMS chips by direct or anodic sealing.
    Another advantage of the invention is that the manufacture of the MEMS chip with its decoupling layer 9 can be achieved by a collective process for all the chips of a wafer before chip separation. This provides an advantage in terms of recurring manufacturing cost.
    In a preferred embodiment of the invention, the decoupling layer and the silicon layer 8 are assembled by direct sealing also called molecular adhesion seal or molecular adhesion or SDB acronym for the expression "Silicon direct bonding" .
    In this type of seal, the two silicon wafers are simply exerted with high pressure and temperature to create covalent bonds at the sealing interface. This type of sealing may be of the hydrophilic type, that is to say between two hydrophilic surfaces. In this case, the seal is made between two oxidized silicon layers 8, that is to say having an SiO 2 film on the surface. In a variant, the hydrophilic seal is made between an oxidized silicon surface and another non-oxidized, that is to say pure, silicon surface. In these two cases, an SI02 film is then present between these two layers in the final MEMS chip. The thickness of the S1O2 film is less than or equal to a few micrometers. The direct seal may also be hydrophobic, that is to say that it is implemented between two hydrophobic surfaces. In this case, the two silicon layers in contact are pure, that is to say without a surface SiO 2 film. In the MEMS chip, these layers are not separated by an SiO 2 film, they are contiguous to each other.
    Sealing by molecular adhesion makes it possible to limit the generation of thermomechanical stresses at the interface between the two assembled silicon layers because it does not require any interface material other than silicon dioxide. The effect of silicon dioxide obtained by oxidation is negligible because it has a coefficient of thermal expansion close to that of silicon and it can be made very thin compared to the silicon layers. The silicon dioxide typically has a thickness less than or equal to one tenth of the thickness of the silicon layers. This is not, however, limiting.
    In one variant, the two silicon layers are assembled by anodic sealing. This type of assembly requires the interposition of a glass layer containing sodium ions or a layer of sodium ion rich silicon dioxide between the two silicon layers to be assembled. A layer of silicon oxide separates the two layers of silicon in the assembly. This layer differs from the silicon oxide layer obtained by hydrophilic direct sealing as it is polluted with sodium ions. It is therefore possible to distinguish an assembly obtained by direct sealing or by anodic sealing. Transmission electron microscopy (TEM) on a micro-cut allows to observe the stack of layers, their thickness, their morphologies and interfaces. The XPS (X-Ray Photoelectron Spectroscopy) technique for detecting the presence of sodium ions in the oxide layer at the interface between the two assembled silicon layers.
    Anodic sealing can create interface stresses, which are associated with the physico-chemical changes that occur in the glass during sealing and the differences in coefficients of thermal expansion between glass and silicon.
    The active and decoupling structures are suspended structures, that is to say they are deformable in the Oxy planes.
    In the embodiment of FIG. 3, the second cover 5 comprises two recesses 17, 18, formed in the silicon layer 8 of said second cover 5. A first recess 17 is opposite the active structure 3 and a second recess 18 is in position. With regard to the decoupling structure 13. These recesses make it possible to guarantee a space between the decoupling structure and the second cover and between the active structure and the second cover so that they are suspended. The thickness of the silicon oxide layer 16 interposed between the active layer 2 and the silicon layer 7 of the first cover 5 is chosen so as to obtain an active structure suspended between the active layer and the silicon layer of the first cover . In general, the covers comprise recesses facing the active structure and / or the decoupling structure and / or a layer of silicon dioxide is interposed between the frame and the adjacent covers and / or a layer of silicon. at least one cover and the active layer at the connection interface between this cover and the active layer so as to allow the active structure and / or the decoupling structure to deform freely.
    Figures 4 to 6 show embodiments of the decoupling layer 9 in section in the xy plane. The Oxyz mark is orthogonal. In these figures, there is shown hatched silicon and white openings made by etching in silicon. These embodiments are not limiting, one could consider other geometries performing the same functions. Moreover, in the embodiments shown, the dimensions (i.e. lengths, widths of the arms) are not limiting. These dimensions and the thickness of the silicon layer in which they are made are not limiting. They are chosen specifically for each MEMS sensor to achieve the desired compromise between static decoupling and dynamic decoupling.
    The decoupling structure 13 and the central transfer element 9 are formed by micromachining in the thickness of the decoupling layer.
    The geometry and the arrangement of the decoupling structures relative to the frame 12 and the central transfer element 9 are defined so as to filter the static deformations of the transfer surface in all the directions of the plane of the decoupling layer and so that the part of the MEMS chip connected to the transfer element 10, fixed to the support 11, by the decoupling structure 23, has modes of vibration of frequencies higher than the frequencies of the useful modes of the active structure 3 in the directions Ox and Oy and around the axis Oz and preferably in all directions of the space in translation and in rotation. In other words, the decoupling structure 13 is defined so as to decoupling the static and dynamic deformations. In other words, when the MEMS chip is fixed on its support, external stresses and external deformations are not transmitted to the parts of the MEMS chip separated from the central transfer element 10 by the decoupling structures 13. rigid fixation of the MEMS chip on the support is ensured.
    Due to the dynamic decoupling, the frequencies of the eigen modes of vibration of the MEMS chip fixed on its support are well separated from the frequencies of the useful modes of the sensitive element. If this separation is not sufficient, there may be a coupling phenomenon between vibration modes which greatly degrades the quality factor of the useful mode and therefore the performance of the sensor. Moreover, the natural modes of vibration of the MEMS chip fixed on its support are not very sensitive to the presence of the vibrations in the operational environments, so as to control the performances, in particular in terms of noise on the output of the sensor.
    In the embodiment of FIG. 4, the decoupling structure 9 connecting the central transfer element 10 and the frame 12 here comprises two first decoupling elements 20, 21 having a low stiffness in a first direction which is the direction defined by the Ox axis in Figure 3. The first direction Ox is a direction of the plane of the decoupling layer
    Oxy. The first two decoupling elements 20, 21 have a high stiffness in a second direction perpendicular to the first direction Ox in the xy plane, that is to say in a direction defined by the axis Oy in FIG. first direction defined by the axis Ox is the set of straight lines parallel to the axis Ox and the second direction defined by the axis Oy is the set of straight lines parallel to the axis Oy. In other words, the first elements of 20, 21 are designed to allow a displacement of the central transfer element 10 relative to the frame 12 in the first direction Ox but to prevent any significant movement of the central transfer member 10 relative to the frame 12 according to the second direction Oy.
    These first decoupling elements are preferably located on either side of the central transfer element 10 in the first direction Ox. In other words, a first decoupling element 20 is situated on one side of the central transfer element and the other first decoupling element 21 is situated on the other side of the central transfer element in the first direction Ox. This makes it possible to obtain a good degree of symmetry, which is particularly favorable if the MEMS operates with differential structures since this makes it possible to preserve their properties.
    There are then two anchoring zones on the frame 12 located on either side of the mobile transfer element in the first direction Ox. The first two decoupling elements 20, 21 are preferably situated on either side of an axis of symmetry 91, in the xy plane, of the central transfer element 10 parallel to the second direction Oy.
    The decoupling structure further comprises two second decoupling elements 22, 23 having a low stiffness in a third direction of the xy plane and a high stiffness in a fourth direction perpendicular to the third direction in the xy plane. In the embodiment of FIG. 4, the third direction is the direction defined by the axis Oy and the fourth direction is the direction defined by the axis Ox. In other words, the decoupling elements are designed to allow a displacement of the central transfer element 10 relative to the frame in the third direction Oy but to prevent any significant movement of the central transfer element 10 relative to the frame 12 according to the fourth direction Ox. Advantageously, the stiffnesses of the first decoupling elements in the respective directions are identical.
    These second decoupling elements 22, 23 are preferably located on either side of the central transfer element 10 in the third direction Oy. There are then two anchoring zones on the frame 12 located on the left and right sides. other of the movable transfer element in the third direction Oy. Advantageously, these second decoupling elements 22, 23 are preferably located on either side of an axis of symmetry 90, in the xy plane, of the central transfer member 10 parallel to Oy. There are then two anchoring zones on the frame 12 located on either side of the movable transfer element, symmetrical with respect to this axis of symmetry 90. Advantageously, the stiffnesses of the second decoupling elements in the respective directions are identical.
    The decoupling elements 20 to 23 absorb the deformations of the transfer surface 10a of the transfer element 10 in the xy plane, which mainly result in deformations of the decoupling elements 20 to 23 along the Ox and Oy directions, but due to their respective stiffnesses, they block the relative displacements between the transfer element 10 and the frame 12. Thus, the flexibility of the decoupling elements 20 to 23 makes it possible to transmit the minimum of effort on the active structure 3 for a deformation However, the combination of the stiff and flexible decoupling elements in different directions makes it possible to achieve a very stiff attachment of the MEMS chip on its support. Thus, the eigen modes of vibration of the MEMS chip (that is to say, the area of the MEMS chip connected to the transfer element 10 by the decoupling structure 13) in the xy plane have high frequencies, that is, significantly higher than the frequencies of the useful modes of the active structure. This makes it possible to avoid the phenomenon of coupling between the mode of the vibration of the MEMS chip fixed to the support and the mode of vibration of the active structure, which would greatly degrade the quality factor of the useful mode and therefore the performance of the sensor. These two modes are decoupled when their respective frequencies are distinct.
    In the embodiment of FIG. 4, the first decoupling elements 21 are bending arms. The first bending arms 20, 21 are elongate arms in the direction defined by the axis Oy (Oy direction), so as to have a high stiffness (high resistance to elongation) in this direction. These arms are more precisely elongated along respective distinct axes parallel to the axis Oy. They are very narrow, compared to their length, to have a low stiffness in the direction defined by the axis Ox (Ox direction), perpendicular to the axis. direction Oy. The second decoupling elements 22, 23 are bending arms. The second bending arms 22, 23 are elongated arms in the direction Ox, so as to have a high stiffness (high resistance to elongation) in this direction. They are very narrow, compared to their length, to have a low stiffness in the direction Oy, perpendicular to Ox. This configuration is compact, simple to perform and adjust. Alternatively, the decoupling elements may have any other shape having a significant stiffness in a direction and comparatively low stiffness in a direction perpendicular to said direction.
    A different number, higher or lower, of decoupling elements can be envisaged. In general, the decoupling structure comprises at least a first decoupling element having a low stiffness in a first direction of the xy plane and a high stiffness in a second direction of the xy plane perpendicular to the first direction and a second decoupling element having a low stiffness along a third direction of the xy plane and a high stiffness along a fourth direction of the xy plane, the first and third directions being different. This makes it possible to ensure a rigid fixation in translation in the xy plane and in rotation around the z axis.
    Advantageously, as shown in FIG. 4, the first and third directions are orthogonal. This embodiment makes it possible to limit the movement of the suspended part of the MEMS chip in the presence of vibrations or accelerations applied to the transfer element 10.
    In FIG. 4, the central transfer element has a square shape having two axes of symmetry 90, 91 in the xy plane. It is connected to elements 20, 21, 22, 23 of decoupling by means of respective rigid arms 40 to 43, that is to say having a high stiffness along the directions Ox and Oy.
    A second example of a decoupling layer is shown in section in FIG. 5. In this example, the decoupling layer 109 differs from the decoupling layer of FIG. 4 in that it comprises a transfer element 110 delimited by an octagon 170. This octagon 170 has four axes of symmetry. The transfer element 110 is connected to the frame 112 by decoupling elements 120 to 127 connecting the respective sides 130 to 137 of the octagon to the frame 112 and made in the form of elongated bending arms extending respectively parallel to the sides 130 at 137 respective octagon. The decoupling elements 120 to 127 are connected to the transfer element 110 via respective rigid arms. The greater number of axes of symmetry in the xy plane makes it possible to obtain better isotropy of the static stresses transmitted from the support to the MEMS chip.
    In general, the central transfer element 10 is advantageously delimited by an overall shape of polygon. Advantageously, the decoupling structure comprises a plurality of connecting elements 120 to 127 and 140 to 147, each connecting element comprising at least one of said link arms 120 to 127 extending parallel to said side 130 to 137 of the polygon. This configuration is particularly advantageous because it is not bulky.
    Advantageously, the polygon is an N-sides polygon and decoupling structure comprises N connecting elements comprising a first set of N bending arms extending longitudinally parallel to the respective N sides of the polygon. Advantageously, the polygon is regular and has a number of even sides, for example a square. Advantageously, the polygon has more than four sides.
    In the embodiments of Figure 4 the arms are located inside the polygon (square) and in the embodiment of Figure 5, the arms are located outside the polygon. In a variant not shown, the decoupling structure comprises two sets of arms located inside and outside the polygon respectively.
    Advantageously, the decoupling elements are designed so as not to allow significant movement of the frame 10 relative to the transfer element 9 along the z axis. This is achieved by a sufficient thickness of the decoupling elements along the z axis. This stiffness makes it possible to avoid the movements of the frame 10, with respect to the transfer element 9, in rotation about the x and y axes and in translation along the z axis.
    The embodiments of FIGS. 4 to 5 are not limiting, the configuration of the decoupling structure is chosen as a function of the structure of the sensitive structure and the desired performances in terms of decoupling.
    The number, geometry and orientation of the decoupling elements are preferably chosen according to the symmetry of the decoupling structure. Advantageously, if the active structure has (or) element (s) of symmetry in the plane perpendicular to the stacking direction, the decoupling structure has the same element (s) of symmetry that the active structure. Advantageously, the transfer element also has the same element or elements of symmetry. This makes it possible to avoid any anisotropy of the physical phenomena transmitted to the sensitive element and to minimize the excitation of the modes of fixation having a rotational movement component in the plane perpendicular to the stacking direction.
    Advantageously, the active structure has at least two symmetry planes perpendicular to each other and parallel to the stacking direction Oz, the fixing structure is configured and arranged to be symmetrical with respect to the two planes of symmetry. This configuration makes it possible to maintain the general symmetry of the structure of the MEMS chip which makes it possible to ensure the symmetry of the physical effects applying to the sensitive structure. This is particularly important in the case where the sensitive structure is made with a differential structure, as is frequently the case in the most efficient MEMS sensors.
    Advantageously, the transfer element and the decoupling structure have planes of symmetry parallel to the stacking direction, these planes of symmetry intersect along a line that is parallel to the stacking direction and on which the center is located. of the part of the MEMS chip which is connected to the transfer element by the decoupling structure. This part of the MEMS chip is formed by the frame, the first and second covers and the active layer. In other words, the coordinates of the center of mass of the part of the MEMS chip which is connected to the transfer element by the decoupling structure in a plane perpendicular to the stacking direction are the same as those of the line according to which intersect the planes of symmetry of the decoupling structure. These coordinates are the coordinates of the point A in the example of FIG. 4. This configuration makes it possible to balance the structure to limit the effect of the vibrations. It makes it possible to prevent the part of the MEMS chip which is connected to the transfer element by the decoupling structure from pivoting with respect to the decoupling structure around the axes ox and oy. The invention also relates to a method for manufacturing an electromechanical microsystem according to the invention.
    The method comprises a step of forming the assembly of the plurality of layers comprising a step of forming the layers divided into sub-steps relating to the different layers, a step of stacking and assembling the different layers possibly divided into individual steps stacking and assembling a plurality of layers taken from among the layers intended to form the stack.
    According to the invention, the method of the stacking and assembly step comprises an individual step of stacking and assembling the decoupling layer 9 and the silicon layer 8 of the second protective cover 5, so that that at most a film 14 of a material is interposed between the decoupling layer 9 and said silicon layer 8, the material being silicon dioxide.
    Advantageously, as specified above, the individual step of stacking and assembling the decoupling layer 9 and the silicon layer 8 of the second protective cap 5 is a direct sealing step. Alternatively, this step is an anodic sealing step.
    An example of a manufacturing method according to the invention is shown in FIG.
    The active structures and the sets of structures are obtained by micromachining. The machining of the active structure can be achieved by using a silicon-on-insulator substrate as the original substrate, but other methods are also possible. A silicon on insulator substrate consists of a silicon substrate a few hundred micrometers thick which carries on its front face a thin layer of silicon oxide itself covered with a monocrystalline silicon layer of a few tens micrometers thick. The machining consists in attacking the silicon of the upper layer by its front face, according to the desired surface patterns, by means of photogravure techniques in use in microelectronics, until reaching the oxide layer, with an etching product selective that attacks silicon without significantly attacking the oxide. Etching is stopped when the oxide layer is exposed. This oxide layer is then removed by selective etching with another product so as to keep only the surface layer of monocrystalline silicon, except at the location of the anchoring zones where the oxide layer remains and forms a solid bond between the substrate and the surface layer of monocrystalline silicon (the active layer). Machining by the front face defines the different cutouts of moving parts.
    We obtain a wafer (or plate) called wafer active structure consisting of an assembly of the first cover and the active layer.
    In the embodiment of FIG. 6, the method comprises: an individual stacking and assembly step 400 of the active structure wafer 4, 15, 2 obtained, the second cover 5 and a monocrystalline silicon layer 9d, intended forming the decoupling layer, the assembly being preferably carried out by direct sealing, this step being the step of assembling the decoupling layer and the silicon layer of the second cap, followed by a step 401 of forming the set of structures in the silicon layer 9d to form the decoupling layer so as to obtain the decoupling layer. The step 401 of forming the set of structures is therefore subsequent to the individualelement'pilçage and assembly 400 of the decoupling layer and the silicon layer of the second cover. As a variant, the step of forming the set of structures could be prior to the step of assembling the decoupling layer and the silicon layer of the second cover.
    On the non-limiting embodiment of Figure 6, the silicon layer of the second cover is oxidized prior to the assembly step with the layer 9d. The formation step of the set of structures is also a machining step as described for the realization of the active structure. Preferably, the step of forming the decoupling structure comprises a Deep Reactive Ion Etching (DRIE) step. This type of etching is preferred for its accuracy and for the verticality of the flanks of the openings, but etching by wet etching (e.g. with potassium hydroxide, KOH) can also be considered. The optional layer of silicon oxide separating the second cover and the silicon layer intended to form the mechanical decoupling or decoupling structure serves as a stop layer for etching.
    In a variant not shown, the method comprises: a step of forming the active structure in a first silicon-on-insulator substrate; an individual step of stacking and assembling the active structure wafer obtained during the preceding step, and a second silicon-on-insulator substrate opposite the active layer, the second silicon-on-insulator substrate comprising a first silicon layer facing the active layer and a second silicon layer intended to form the decoupling layer, the assembly is advantageously implemented by molecular adhesion sealing, followed by a step of forming the set of structures in the silicon layer intended to form the decoupling layer.
    In another variant not shown, the set of structures is made in a double silicon-on-insulator substrate comprising a stack of a silicon substrate layer intended to form the decoupling layer and two other silicon layers, one intended to form the silicon layer of the second cover and the other intended to form the active layer. This step is followed by a step of stacking the double silicon-on-insulator substrate obtained with the first cover and assembly by molecular bonding. The individual step of assembling the decoupling layer and the silicon layer of the second protective cap is performed during the manufacture of the double silicon on insulator substrate.
    The embodiments described above are nonlimiting exemplary embodiments.
    Advantageously, the formation step forming step of the assembly of the plurality of layers is collective. It makes it possible to obtain an assembly in the form of a plate incorporating a plurality of electromechanical microsystems according to the invention, the respective layers of which are common to all the electromechanical microsystems. The layers include an active layer comprising a plurality of active structures, a first cover layer comprising a plurality of first covers, a second cover layer comprising a plurality of second covers and a decoupling layer comprising a plurality of sets of structures. In other words, the individual steps of stacking and assembly are common to all microsystems.
    The manufacturing method comprises a separation step of cutting the plate so as to isolate the microsystems according to the invention, that is to say to separate them from each other.
    The method of manufacturing the electromechanical device according to the invention comprises the method described above and a step of carrying the MEMS chip, that is to say the electromechanical microsystem, on the support so that the MEMS chip is fixed to the support via the central reporting element. In other words, only the transfer element of the decoupling layer is fixed to the support. This step may be performed by soldering or gluing or by any other means of attachment. This step is performed individually for each MEMS chip, that is to say after the separation step.
    权利要求:
    Claims (15)
    [1" id="c-fr-0001]
    An electromechanical microsystem (1) comprising an assembly (1e) of a plurality of stacked layers in a stacking direction (2) comprising: - an active layer (2) made of monocrystalline silicon, said active layer (2) comprising a active structure (3), - a first cover (4) and a second cover (5) delimiting a cavity (6) around the active structure (3), the active layer (2) being interposed between the first cover (4) and the second cover (5), the second cover (5) comprising a single layer (8) of monocrystalline silicon, characterized in that the assembly (1e) further comprises a decoupling layer (9) of monocrystalline silicon comprising a transfer element (10) intended to be fixed to a support (11), a frame (12) surrounding the transfer element (10) in the plane of the decoupling layer (9), a structure of mechanical decoupling (13) connecting the frame (12) and the transfer structure (10), the decoupled structure mechanical geometry (13) for flexibly connecting the transfer member (10) to the frame (12), in that the frame (12) is integral with the silicon layer (8) of the second cover (5) and in that at most one film of a material is interposed between said frame (12) and said silicon layer (8) of the second cover (5), the material being silicon dioxide.
    [2" id="c-fr-0002]
    2. Micros electromechanical system according to the preceding claim, wherein the decoupling layer (9) and the second cover (5) are assembled by direct sealing.
    [3" id="c-fr-0003]
    An electromechanical microsystem according to any one of the preceding claims, wherein the shape of the active structure (3) in a plane perpendicular to the stacking direction has at least one symmetry element and wherein the mechanical decoupling structure has said at least one symmetry element.
    [4" id="c-fr-0004]
    4. An electromechanical microsystem according to any one of the preceding claims, wherein the transfer element and the decoupling structure have planes of symmetry parallel to the stacking direction, these planes of symmetry intersect according to a line which is parallel to the stacking direction and on which is located the center of mass of the part of the electromechanical microsystem which is connected to the transfer element by the decoupling structure.
    [5" id="c-fr-0005]
    An electromechanical microsystem according to any one of the preceding claims, wherein the mechanical decoupling structure (13) comprises: - at least a first decoupling element adapted to allow movement of the transfer member (10) relative to the frame (12) in a first direction (Ox) of the plane of the decoupling layer but to prevent any significant movement of the transfer member (10) relative to the frame (12) in a second direction (Oy) of the plane of the decoupling layer perpendicular to the first direction (Ox), - at least a second decoupling element designed to allow a displacement of the transfer element (10) relative to the frame (12) in a third direction (Oy) of the plan of the decoupling layer but to prevent any significant movement of the transfer member (10) relative to the frame (12) in a fourth direction (Ox) of the plane of the decoupling layer perpe ndicular to the third direction (Oy), the third direction (Oy) being distinct from the first direction (Ox).
    [6" id="c-fr-0006]
    6. Electromechanical microsystem according to the preceding claim, wherein the first direction (Ox) and the third direction t (Oy) are orthogonal.
    [7" id="c-fr-0007]
    7. Electromechanical microsystem according to the preceding claim, wherein the mechanical decoupling structure (13) comprises two first decoupling elements (20, 21), arranged on either side of the transfer element (10) in the first direction. (Ox) and two second decoupling elements arranged on either side of the transfer member (10) in the third direction (Oy).
    [8" id="c-fr-0008]
    An electromechanical microsystem according to any of claims 5 to 7, wherein the first and second decoupling elements are bending arms.
    [9" id="c-fr-0009]
    9. Electromechanical microsystem according to the preceding claim, wherein the central transfer element (10) is delimited by a polygon comprising a plurality of sides, the decoupling structure (13) comprising connecting elements connecting the frame (12) and the respective sides of the polygon, each link member comprising at least one of said link arms extending parallel to said polygon side.
    [10" id="c-fr-0010]
    10. An electromechanical microsystem according to the preceding claim, wherein the polygon comprises more than four sides.
    [11" id="c-fr-0011]
    An electromechanical device comprising the electromechanical microsystem according to any one of the preceding claims and a support (11), the decoupling layer being fixed to said support (11) only via said transfer element (10).
    [12" id="c-fr-0012]
    12. Electromechanical device according to the preceding claim, wherein a single continuous surface of the transfer element (10) is fixed to said support (11).
    [13" id="c-fr-0013]
    A method of manufacturing an electromechanical microsystem according to any one of claims 1 to 10, said method comprising a step of forming the assembly comprising a stacking and assembling step (400) in which one stacks and the decoupling layer (9) and the silicon layer (8) of the second cover (5) are assembled so that at most one film (14) of a material is interposed between the decoupling layer and said silicon (8) of the second cap (5), the material being silicon dioxide.
    [14" id="c-fr-0014]
    14. The manufacturing method according to the preceding claim, wherein the assembly of the decoupling layer (9) and the silicon layer (8) of the second cap (5) is made by direct sealing.
    [15" id="c-fr-0015]
    15. Manufacturing method according to any one of claims 13 to 14, comprising a collective step of forming the assembly of the plurality of layers for obtaining an assembly in the form of a plate incorporating a plurality of electromechanical microsystems and a separation step of cutting the plate so as to isolate the micro electromechanical systems.
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    同族专利:
    公开号 | 公开日
    US9731958B2|2017-08-15|
    US20170107098A1|2017-04-20|
    FR3042483B1|2017-11-24|
    EP3156361A1|2017-04-19|
    EP3156361B1|2017-11-08|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    DE4107658A1|1991-03-09|1992-09-17|Bosch Gmbh Robert|ASSEMBLY METHOD FOR MICROMECHANICAL SENSORS|
    EP2447209A1|2010-10-29|2012-05-02|Thales|Microelectromechanical system |
    US20150181697A1|2013-12-20|2015-06-25|Analog Devices, Inc.|Integrated device die and package with stress reduction features|
    US7247246B2|2003-10-20|2007-07-24|Atmel Corporation|Vertical integration of a MEMS structure with electronics in a hermetically sealed cavity|
    US7611919B2|2005-04-21|2009-11-03|Hewlett-Packard Development Company, L.P.|Bonding interface for micro-device packaging|
    CN102792419B|2010-01-28|2015-08-05|盾安美斯泰克股份有限公司|The technique that high temperature selective fusion engages and structure|
    US8569090B2|2010-12-03|2013-10-29|Babak Taheri|Wafer level structures and methods for fabricating and packaging MEMS|
    US9187313B2|2012-06-26|2015-11-17|Honeywell International Inc.|Anodically bonded strain isolator|
    US9409765B1|2013-02-01|2016-08-09|Maxim Integrated Products, Inc.|Method and apparatus for an isolating structure|
    US20140374847A1|2013-06-20|2014-12-25|Honeywell International Inc.|Packaging method for mems devices|
    DE102014210934A1|2014-06-06|2015-12-17|Robert Bosch Gmbh|Vertical hybrid integrated MEMS ASIC device with stress decoupling structure|CN110546516A|2017-05-08|2019-12-06|赛峰蜂鸟股份有限公司|Decoupling structure for accelerometer|
    US20190169018A1|2017-12-05|2019-06-06|Invensense, Inc.|Stress isolation frame for a sensor|
    RU2753475C1|2020-09-15|2021-08-17|Акционерное общество "Инерциальные технологии "Технокомплекса" |Micromechanical accelerometer|
    法律状态:
    2016-09-28| PLFP| Fee payment|Year of fee payment: 2 |
    2017-04-21| PLSC| Publication of the preliminary search report|Effective date: 20170421 |
    2017-09-29| PLFP| Fee payment|Year of fee payment: 3 |
    2018-09-28| PLFP| Fee payment|Year of fee payment: 4 |
    2020-10-16| ST| Notification of lapse|Effective date: 20200914 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1502178A|FR3042483B1|2015-10-16|2015-10-16|ELECTROMECHANICAL MICROSYSTEM AND METHOD OF MANUFACTURE|FR1502178A| FR3042483B1|2015-10-16|2015-10-16|ELECTROMECHANICAL MICROSYSTEM AND METHOD OF MANUFACTURE|
    EP16190126.9A| EP3156361B1|2015-10-16|2016-09-22|Electromechanical microsystem having decoupling layer and manufacturing method|
    US15/273,423| US9731958B2|2015-10-16|2016-09-22|Microelectromechanical system and fabricating process having decoupling structure that includes attaching element for fastening to carrier|
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